JPS5855732A - 静電容量型圧力センサ - Google Patents

静電容量型圧力センサ

Info

Publication number
JPS5855732A
JPS5855732A JP56153611A JP15361181A JPS5855732A JP S5855732 A JPS5855732 A JP S5855732A JP 56153611 A JP56153611 A JP 56153611A JP 15361181 A JP15361181 A JP 15361181A JP S5855732 A JPS5855732 A JP S5855732A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
amplifier
film
pressure sensor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56153611A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6356935B2 (en]
Inventor
Satoshi Shimada
智 嶋田
Kazuji Yamada
一二 山田
Kiyomitsu Suzuki
清光 鈴木
Motohisa Nishihara
西原　元久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56153611A priority Critical patent/JPS5855732A/ja
Priority to US06/426,084 priority patent/US4495820A/en
Publication of JPS5855732A publication Critical patent/JPS5855732A/ja
Publication of JPS6356935B2 publication Critical patent/JPS6356935B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
JP56153611A 1981-09-30 1981-09-30 静電容量型圧力センサ Granted JPS5855732A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56153611A JPS5855732A (ja) 1981-09-30 1981-09-30 静電容量型圧力センサ
US06/426,084 US4495820A (en) 1981-09-30 1982-09-28 Capacitive pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56153611A JPS5855732A (ja) 1981-09-30 1981-09-30 静電容量型圧力センサ

Publications (2)

Publication Number Publication Date
JPS5855732A true JPS5855732A (ja) 1983-04-02
JPS6356935B2 JPS6356935B2 (en]) 1988-11-09

Family

ID=15566265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56153611A Granted JPS5855732A (ja) 1981-09-30 1981-09-30 静電容量型圧力センサ

Country Status (2)

Country Link
US (1) US4495820A (en])
JP (1) JPS5855732A (en])

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62186938A (ja) * 1986-02-13 1987-08-15 Okazaki Seisakusho:Kk 固体の接合方法
US5041900A (en) * 1987-08-06 1991-08-20 Hamilton Standard Controls, Inc. Semiconductor device having sealed electrical feedthrough
JP2000018908A (ja) * 1998-07-02 2000-01-21 Nippon Telegr & Teleph Corp <Ntt> 表面形状認識用センサ
US6438257B1 (en) 1998-07-02 2002-08-20 Nippon Telegraph And Telephone Corporation Small capacitance change detection device
CN111128551A (zh) * 2019-12-03 2020-05-08 上海理工大学 一种基于二氧化硅微球的微电发生器及制备方法

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310643C2 (de) * 1983-03-24 1986-04-10 Karlheinz Dr. 7801 Schallstadt Ziegler Drucksensor
US4530029A (en) * 1984-03-12 1985-07-16 United Technologies Corporation Capacitive pressure sensor with low parasitic capacitance
US4609968A (en) * 1984-05-18 1986-09-02 Becton, Dickinson And Company Glass inlays for use in bonding semiconductor wafers
FI75426C (fi) * 1984-10-11 1988-06-09 Vaisala Oy Absoluttryckgivare.
US4625561A (en) * 1984-12-06 1986-12-02 Ford Motor Company Silicon capacitive pressure sensor and method of making
DE3668499D1 (de) * 1985-03-27 1990-03-01 Siemens Ag Kapazitiver drucksensor.
US4586109A (en) * 1985-04-01 1986-04-29 Bourns Instruments, Inc. Batch-process silicon capacitive pressure sensor
US4625560A (en) * 1985-05-13 1986-12-02 The Scott & Fetzer Company Capacitive digital integrated circuit pressure transducer
DE3635462A1 (de) * 1985-10-21 1987-04-23 Sharp Kk Feldeffekt-drucksensor
NL8503574A (nl) * 1985-12-24 1987-07-16 Sentron V O F Druksensor.
JPS63149531A (ja) * 1986-12-12 1988-06-22 Fuji Electric Co Ltd 静電容量式圧力センサ
US4772983A (en) * 1987-04-20 1988-09-20 Linear Measurements, Inc. Method and article for a nearly zero temperature coefficient pressure transducer
FI78784C (fi) * 1988-01-18 1989-09-11 Vaisala Oy Tryckgivarkonstruktion och foerfarande foer framstaellning daerav.
US4808549A (en) * 1988-05-27 1989-02-28 Ford Motor Company Method for fabricating a silicon force transducer
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
DE4006108A1 (de) * 1990-02-27 1991-08-29 Bosch Gmbh Robert Verfahren zum aufbau von mikromechanischen bauelementen in dickschichttechnik
JPH04268725A (ja) * 1991-02-25 1992-09-24 Canon Inc 力学量検出センサおよびその製造方法
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
DE4206675C2 (de) * 1992-02-28 1995-04-27 Siemens Ag Verfahren zum Herstellen von Druckdifferenz-Sensoren
US5369544A (en) * 1993-04-05 1994-11-29 Ford Motor Company Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
US5375034A (en) * 1993-12-02 1994-12-20 United Technologies Corporation Silicon capacitive pressure sensor having a glass dielectric deposited using ion milling
US5744725A (en) * 1994-04-18 1998-04-28 Motorola Inc. Capacitive pressure sensor and method of fabricating same
JP3383081B2 (ja) 1994-07-12 2003-03-04 三菱電機株式会社 陽極接合法を用いて製造した電子部品及び電子部品の製造方法
US5646348A (en) * 1994-08-29 1997-07-08 The Charles Stark Draper Laboratory, Inc. Micromechanical sensor with a guard band electrode and fabrication technique therefor
US5578843A (en) * 1994-10-06 1996-11-26 Kavlico Corporation Semiconductor sensor with a fusion bonded flexible structure
US5637802A (en) * 1995-02-28 1997-06-10 Rosemount Inc. Capacitive pressure sensor for a pressure transmitted where electric field emanates substantially from back sides of plates
US6484585B1 (en) 1995-02-28 2002-11-26 Rosemount Inc. Pressure sensor for a pressure transmitter
DE19616014B4 (de) * 1996-04-23 2006-04-20 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanische Strukturen aufweisenden Halbleiterbauelementen
DE19616970B4 (de) * 1996-04-27 2012-04-12 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanische Strukturen aufweisenden Halbleiterbauelementen
US5966617A (en) * 1996-09-20 1999-10-12 Kavlico Corporation Multiple local oxidation for surface micromachining
DE69702745T2 (de) * 1997-03-04 2000-12-07 Stmicroelectronics S.R.L., Agrate Brianza Methode zur Herstellung von mikromechanischen Drucksensoren
US5965821A (en) * 1997-07-03 1999-10-12 Mks Instruments, Inc. Pressure sensor
US6034414A (en) * 1997-11-18 2000-03-07 Industrial Technology Research Institute Variable capacitor using resistor generated heat to control dielectric thickness
US20040099061A1 (en) 1997-12-22 2004-05-27 Mks Instruments Pressure sensor for detecting small pressure differences and low pressures
US5982608A (en) * 1998-01-13 1999-11-09 Stmicroelectronics, Inc. Semiconductor variable capacitor
EP0950884B1 (de) * 1998-04-17 2004-08-18 Micronas GmbH Kapazitiver Sensor
DE19847563A1 (de) * 1998-04-17 1999-10-28 Micronas Intermetall Gmbh Kapazitiver Sensor
US6561038B2 (en) 2000-01-06 2003-05-13 Rosemount Inc. Sensor with fluid isolation barrier
US6505516B1 (en) 2000-01-06 2003-01-14 Rosemount Inc. Capacitive pressure sensing with moving dielectric
US6508129B1 (en) 2000-01-06 2003-01-21 Rosemount Inc. Pressure sensor capsule with improved isolation
AU2629901A (en) 2000-01-06 2001-07-16 Rosemount Inc. Grain growth of electrical interconnection for microelectromechanical systems (mems)
US6520020B1 (en) 2000-01-06 2003-02-18 Rosemount Inc. Method and apparatus for a direct bonded isolated pressure sensor
JP3932302B2 (ja) * 2000-12-27 2007-06-20 独立行政法人産業技術総合研究所 圧力センサ
FR2818676B1 (fr) * 2000-12-27 2003-03-07 Freyssinet Int Stup Procede de demontage d'un cable de precontrainte et dispositif pour la mise en oeuvre
US6848316B2 (en) * 2002-05-08 2005-02-01 Rosemount Inc. Pressure sensor assembly
US6993973B2 (en) * 2003-05-16 2006-02-07 Mks Instruments, Inc. Contaminant deposition control baffle for a capacitive pressure transducer
DE102005003548A1 (de) * 2004-02-02 2006-02-09 Volkswagen Ag Bedienelement für ein Kraftfahrzeug
US7201057B2 (en) * 2004-09-30 2007-04-10 Mks Instruments, Inc. High-temperature reduced size manometer
US7141447B2 (en) * 2004-10-07 2006-11-28 Mks Instruments, Inc. Method of forming a seal between a housing and a diaphragm of a capacitance sensor
US7137301B2 (en) * 2004-10-07 2006-11-21 Mks Instruments, Inc. Method and apparatus for forming a reference pressure within a chamber of a capacitance sensor
US7204150B2 (en) 2005-01-14 2007-04-17 Mks Instruments, Inc. Turbo sump for use with capacitive pressure sensor
US8187195B2 (en) * 2005-10-12 2012-05-29 Radi Medical Systems Ab Sensor wire assembly
JP2009250874A (ja) * 2008-04-09 2009-10-29 Nagano Keiki Co Ltd 物理量センサおよびその製造方法
WO2013035515A1 (ja) 2011-09-07 2013-03-14 Tdk株式会社 積層型コイル部品

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880009A (en) * 1973-05-24 1975-04-29 Bunker Ramo Pressure transducer
US4426673A (en) * 1976-03-12 1984-01-17 Kavlico Corporation Capacitive pressure transducer and method of making same
US4064550A (en) * 1976-03-22 1977-12-20 Hewlett-Packard Company High fidelity pressure transducer
US4262399A (en) * 1978-11-08 1981-04-21 General Electric Co. Ultrasonic transducer fabricated as an integral park of a monolithic integrated circuit
US4277814A (en) * 1979-09-04 1981-07-07 Ford Motor Company Semiconductor variable capacitance pressure transducer assembly
US4381788A (en) * 1981-02-27 1983-05-03 Douglas David W Method and apparatus for detecting apnea
US4389895A (en) * 1981-07-27 1983-06-28 Rosemount Inc. Capacitance pressure sensor
US4405970A (en) * 1981-10-13 1983-09-20 United Technologies Corporation Silicon-glass-silicon capacitive pressure transducer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62186938A (ja) * 1986-02-13 1987-08-15 Okazaki Seisakusho:Kk 固体の接合方法
US5041900A (en) * 1987-08-06 1991-08-20 Hamilton Standard Controls, Inc. Semiconductor device having sealed electrical feedthrough
JP2000018908A (ja) * 1998-07-02 2000-01-21 Nippon Telegr & Teleph Corp <Ntt> 表面形状認識用センサ
US6438257B1 (en) 1998-07-02 2002-08-20 Nippon Telegraph And Telephone Corporation Small capacitance change detection device
CN111128551A (zh) * 2019-12-03 2020-05-08 上海理工大学 一种基于二氧化硅微球的微电发生器及制备方法

Also Published As

Publication number Publication date
JPS6356935B2 (en]) 1988-11-09
US4495820A (en) 1985-01-29

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